Rakon晶振,QEN49-BHRIDT50SB/T-32MHZ,長方型鐘振,6G基站晶振，尺寸20.7*13.1mm,頻率為32MHZ，進(jìn)口有源晶振，OSC晶振，石英晶體振蕩器，有源晶體振蕩器，該晶體振蕩器是基于DIL軟件包中的混合技術(shù)。該XO執(zhí)行+/-50至+/-100pm的總體頻率穩(wěn)定性（與25°C的溫度范圍和校準(zhǔn)、負(fù)載和電源變化），每年老化+/- 5ppm。此參考文獻(xiàn)適用于堅(jiān)固的無線電系統(tǒng)，例如高速列車或航空電子系統(tǒng)。
進(jìn)口有源晶振產(chǎn)品應(yīng)用范圍：推薦用于嵌入式應(yīng)用程序、擴(kuò)展的溫度范圍和堅(jiān)固的環(huán)境，無線電系統(tǒng)，航空電子等領(lǐng)域。Rakon晶振,QEN49-BHRIDT50SB/T-32MHZ,長方型鐘振,6G基站晶振.
Rakon晶振,QEN49-BHRIDT50SB/T-32MHZ,長方型鐘振,6G基站晶振 參數(shù)表
| Line | Parameters | Conditions/Remarks | MinTyp | Max | Unit | |||||||||||||
| 3.1a | Nominal Frequency | 32 | MHz | |||||||||||||||
| 3.2 |
Steady state input current power |
20 | mA | |||||||||||||||
|
3.3 3.4 |
Global Frequency stability |
Including initial accuracy+freq temp stability+power supply stab+load stability+ageing over 15 years |
Temperature option DT Temperature option AY |
± 50 ± 100 |
ppm ppm |
|||||||||||||
| 3.5 | Initial frequency accuracy | ± 15 | ppm | |||||||||||||||
|
3.6 3.7 |
Frequency‐temperature stability |
Temperature option DT |
± 20 | ppm | ||||||||||||||
|
Temperature option AY |
± 25 | ppm | ||||||||||||||||
| 3.8 |
Frequency variation vs. supply voltage |
Over Operating Temperature | ± 3 | ppm | ||||||||||||||
| 3.9 | Frequency variation vs. load | Over Operating Temperature | ± 5 | ppm | ||||||||||||||
| 3.10 | Frequency ageing | Over 15 years | ± 12 | ppm | ||||||||||||||
| 3.11 | Start up time | 10 | ms | |||||||||||||||
| 3.12 | Output waveform | AHCMOS compatible | Square | |||||||||||||||
|
3.13a 3.13b 3.14a 3.14b |
Output level |
Supply option BH VOL Supply option AH Supply option BH VOH Supply option AH |
2.4 4.5 |
0.4 0.5 |
V V V V |
|||||||||||||
| 3.15 | Duty cycle | 40 | 60 | |||||||||||||||
| Option R | 45 | 55 | % | |||||||||||||||
| 3.16 | Rise time | 10%‐90% of Vcc, frequency > 10MHz | 5 | ns | ||||||||||||||
| 3.17 | Fall time | 90%‐ 10% of Vcc, , frequency > 10MHz | 5 | ns | ||||||||||||||
Rakon晶振,QEN49-BHRIDT50SB/T-32MHZ,長方型鐘振,6G基站晶振 尺寸圖
產(chǎn)品特性：
混合產(chǎn)品與模具和電線結(jié)合到陶瓷基板上與3點(diǎn)晶體諧振器。
外殼類型:DIL封裝14引腳20.7x13.1x5.1mm典型
頻率范圍:1.5MHz至100MHz
溫度范圍:從‐40°C到+85°C到‐55°C到+125°C
總體頻率穩(wěn)定性與溫度范圍和校準(zhǔn)在25°C
負(fù)載和電源變化:總體+/‐50至+/‐100pm
每年老化:第一年85°C時(shí)+/‐5ppm
輸出波形:方形;三態(tài)輸出
電源電壓:+3.3V或+5V
可選:R:占空比50/50;T:錫制銷;篩選B
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